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Grain boundary reactive diffusion during Ni~2Si formation in thin films and its dependence on the grain boundary angle
Grain boundary reactive diffusion during Ni~2Si formation in thin films and its dependence on the grain boundary angle
Grain boundary reactive diffusion during Ni~2Si formation in thin films and its dependence on the grain boundary angle
Jardim, P. M. (Autor:in) / Acchar, W. (Autor:in) / Losch, W. (Autor:in)
APPLIED SURFACE SCIENCE ; 137 ; 163-169
01.01.1999
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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