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Grain boundary reactive diffusion during Ni~2Si formation in thin films and its dependence on the grain boundary angle
Grain boundary reactive diffusion during Ni~2Si formation in thin films and its dependence on the grain boundary angle
Grain boundary reactive diffusion during Ni~2Si formation in thin films and its dependence on the grain boundary angle
Jardim, P. M. (author) / Acchar, W. (author) / Losch, W. (author)
APPLIED SURFACE SCIENCE ; 137 ; 163-169
1999-01-01
7 pages
Article (Journal)
English
DDC:
621.35
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