Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon
Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon
Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon
Caturla, M. J. (Autor:in) / De la Rubia, T. D.
01.01.1998
14 pages
Aufsatz (Zeitschrift)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2005
|British Library Online Contents | 1994
|Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
British Library Online Contents | 2002
|Atomistic insights into Li-ion diffusion in amorphous silicon
British Library Online Contents | 2015
|Dopant Diffusion and Stacking Fault in Silicon During Thermal Oxidation
British Library Online Contents | 1995
|