Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon

Caturla, M. J. | British Library Online Contents | 1998

Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation

Pelaz, L. / Marqués, L. A. / Aboy, M. et al. | British Library Online Contents | 2005

Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density

Saddow, S.E. / Mazzola, M.S. / Rendakova, S.V. et al. | British Library Online Contents | 1999

Enhanced Dopant Diffusion Effects in 4H Silicon Carbide

Phelps, G. J. / Wright, N. G. / Chester, E. G. et al. | British Library Online Contents | 2002

The fracture strength of nitrogen doped silicon wafers

Vedde, J. / Gravesen, P. | British Library Online Contents | 1996