Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution: Fid-Bau Portal

Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution

Hsiao, H.L. / Hwang, H.L. / Yang, A.B. / Chen, L.W. / Yew, T.R.

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Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution

Hsiao, H.L. / Hwang, H.L. / Yang, A.B. / Chen, L.W. / Yew, T.R.

Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution

Hsiao, H.L. / Hwang, H.L. / Yang, A.B. / Chen, L.W. / Yew, T.R.

Zugriff

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Titel:

Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution

Beteiligte:

Hsiao, H.L. (Autor:in) / Hwang, H.L. (Autor:in) / Yang, A.B. (Autor:in) / Chen, L.W. (Autor:in) / Yew, T.R. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 142 ; 316-321

Erscheinungsdatum:

01.01.1999

Format / Umfang:

6 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

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