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Heteroepitaxy of 3C-SiC using triode plasma enhanced chemical vapor deposition on Si substrates without buffer layer
Heteroepitaxy of 3C-SiC using triode plasma enhanced chemical vapor deposition on Si substrates without buffer layer
Heteroepitaxy of 3C-SiC using triode plasma enhanced chemical vapor deposition on Si substrates without buffer layer
Yasui, K. (Autor:in) / Kimura, M. (Autor:in) / Sanada, K. (Autor:in) / Akahane, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 142 ; 381-385
01.01.1999
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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