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Heteroepitaxy of 3C-SiC using triode plasma enhanced chemical vapor deposition on Si substrates without buffer layer
Heteroepitaxy of 3C-SiC using triode plasma enhanced chemical vapor deposition on Si substrates without buffer layer
Heteroepitaxy of 3C-SiC using triode plasma enhanced chemical vapor deposition on Si substrates without buffer layer
Yasui, K. (author) / Kimura, M. (author) / Sanada, K. (author) / Akahane, T. (author)
APPLIED SURFACE SCIENCE ; 142 ; 381-385
1999-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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