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Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVD
Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVD
Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVD
Yasui, K. (Autor:in) / Kikuchi, M. (Autor:in) / Uwabachi, A. (Autor:in) / Akahane, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 142 ; 386-389
01.01.1999
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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