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    Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVD

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    New search for: Kikuchi, M.
    New search for: Uwabachi, A.
    New search for: Akahane, T.

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    Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVD

    New search for: Yasui, K.
    New search for: Kikuchi, M.
    New search for: Uwabachi, A.
    New search for: Akahane, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVD

    New search for: Yasui, K.
    New search for: Kikuchi, M.
    New search for: Uwabachi, A.
    New search for: Akahane, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVD

    Contributors:

    Yasui, K. (author) / Kikuchi, M. (author) / Uwabachi, A. (author) / Akahane, T. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 142 ; 386-389

    Publication date:

    1999-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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