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Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation
Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation
Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation
Legodi, M.J. (Autor:in) / Auret, F.D. (Autor:in) / Goodman, S.A. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 71 ; 96 - 99
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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