Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts: Fid-Bau Portal

Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

Taghizadeh, F. / Janse van Rensburg, P.J. / Ostvar, K. / Meyer, W.E. / Auret, F.D.

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Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

Taghizadeh, F. / Janse van Rensburg, P.J. / Ostvar, K. / Meyer, W.E. / Auret, F.D.

Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

Taghizadeh, F. / Janse van Rensburg, P.J. / Ostvar, K. / Meyer, W.E. / Auret, F.D.

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Titel:

Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

Beteiligte:

Taghizadeh, F. (Autor:in) / Janse van Rensburg, P.J. (Autor:in) / Ostvar, K. (Autor:in) / Meyer, W.E. (Autor:in) / Auret, F.D. (Autor:in)

Erschienen in:

Materials science in semiconductor processing ; 99 ; 23-27

Erscheinungsdatum:

01.01.2019

Format / Umfang:

5 pages

ISSN:

1369-8001

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.38152

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