Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation

    New search for: Legodi, M.J.
    New search for: Auret, F.D.
    New search for: Goodman, S.A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation

    New search for: Legodi, M.J.
    New search for: Auret, F.D.
    New search for: Goodman, S.A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation

    New search for: Legodi, M.J.
    New search for: Auret, F.D.
    New search for: Goodman, S.A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation

    Contributors:

    Legodi, M.J. (author) / Auret, F.D. (author) / Goodman, S.A. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 71 ; 96 - 99

    Publication date:

    2000-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

    Taghizadeh, F. / Janse van Rensburg, P.J. / Ostvar, K. et al. | British Library Online Contents | 2019

    Cubic metastable FeSi~1~-~x epitaxially grown on Si and MgO substrates

    Degroote, S. / Vantomme, A. / Dekoster, J. et al. | British Library Online Contents | 1996

    Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs

    Auret, F. D. / Goodman, S. A. / Meyer, W. E. et al. | British Library Online Contents | 1993

    Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs

    Auret, F. D. / Goodman, S. A. / Meyer, W. E. | British Library Online Contents | 1995

    Epitaxially grown metal-organic frameworks

    Gliemann, H. / Woll, C. | British Library Online Contents | 2012

    Back to top