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High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing
High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing
High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing
Panknin, D. (Autor:in) / Wirth, H. (Autor:in) / Anwand, W. (Autor:in) / Brauer, G. (Autor:in) / Skorupa, W. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 877-880
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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