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    High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing

    New search for: Panknin, D.
    New search for: Wirth, H.
    New search for: Anwand, W.
    New search for: Brauer, G.
    New search for: Skorupa, W.

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    High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing

    New search for: Panknin, D.
    New search for: Wirth, H.
    New search for: Anwand, W.
    New search for: Brauer, G.
    New search for: Skorupa, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing

    New search for: Panknin, D.
    New search for: Wirth, H.
    New search for: Anwand, W.
    New search for: Brauer, G.
    New search for: Skorupa, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing

    Contributors:

    Panknin, D. (author) / Wirth, H. (author) / Anwand, W. (author) / Brauer, G. (author) / Skorupa, W. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 338/342 ; 877-880

    Publication date:

    2000-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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