High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

Vassilevski, K. / Nikitina, I. / Horsfall, A. et al. | British Library Online Contents | 2007

Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination Extension

Raynaud, C. / Lazar, M. / Planson, D. et al. | British Library Online Contents | 2004

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

Wang, S. R. / Raynaud, C. / Planson, D. et al. | British Library Online Contents | 2003

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step

Deng, X.C. / Rao, C.Y. / Wei, J. et al. | British Library Online Contents | 2014

Grayscale Junction Termination for High-Voltage SiC Devices

Imhoff, E.A. / Kub, F.J. / Hobart, K.D. | British Library Online Contents | 2009