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TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors
TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors
TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors
Adachi, K. (Autor:in) / Johnson, C. M. (Autor:in) / Ortolland, S. (Autor:in) / Wright, N. G. (Autor:in) / O'Neill, A. G. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1419-1422
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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