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Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
Tang, Y. (Autor:in) / Fedison, J. B. (Autor:in) / Chow, T. P. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1329-1332
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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