Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

Veliadis, V. / Hearne, H. / Stewart, E.J. et al. | British Library Online Contents | 2009

Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

Balachandran, S. / Chow, T. P. / Agarwal, A. K. | British Library Online Contents | 2006

Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC

Tang, Y. / Fedison, J. B. / Chow, T. P. | British Library Online Contents | 2002

Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors

Negoro, Y. / Horiuchi, A. / Iwanaga, K. et al. | British Library Online Contents | 2009

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Zhang, J. / Jonas, C. / Burk, A.A. et al. | British Library Online Contents | 2009