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Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process
Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process
Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process
Avrov, D. D. (Autor:in) / Dorozhkin, S. I. (Autor:in) / Lebedev, A. O. (Autor:in) / Rastegaev, V. P. (Autor:in) / Tairov, Y. M. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1515-1518
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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