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Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process

Avrov, D. D. / Dorozhkin, S. I. / Lebedev, A. O. / Rastegaev, V. P. / Tairov, Y. M.

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Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process

Avrov, D. D. / Dorozhkin, S. I. / Lebedev, A. O. / Rastegaev, V. P. / Tairov, Y. M.

Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process

Avrov, D. D. / Dorozhkin, S. I. / Lebedev, A. O. / Rastegaev, V. P. / Tairov, Y. M.

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Document information

Title:

Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process

Contributors:

Avrov, D. D. (author) / Dorozhkin, S. I. (author) / Lebedev, A. O. (author) / Rastegaev, V. P. (author) / Tairov, Y. M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1515-1518

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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