Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy
Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy
Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy
Holst, J. (Autor:in) / Kaschner, A. (Autor:in) / Hoffmann, A. (Autor:in) / Broser, I. (Autor:in) / Fischer, P. (Autor:in) / Bertram, F. (Autor:in) / Riemann, T. (Autor:in) / Christen, J. (Autor:in) / Hiramatsu, K. (Autor:in) / Shibata, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1575-1578
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1999
|Epitaxial lateral overgrowth of semiconductor structures by liquid phase epitaxy
British Library Online Contents | 2005
|Epitaxial lateral overgrowth of semiconductor structures by liquid phase epitaxy
British Library Online Contents | 2005
|Dislocations formed under longitudinal stress field in epitaxial-lateral-overgrowth GaN
British Library Online Contents | 2006
|British Library Online Contents | 2000
|