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Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO~2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy
Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO~2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy
Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO~2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy
Bertram, F. (Autor:in) / Riemann, T. (Autor:in) / Rudloff, D. (Autor:in) / Christen, J. (Autor:in) / Kaschner, A. (Autor:in) / Hoffmann, A. (Autor:in) / Hiramatsu, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1483-1486
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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British Library Online Contents | 1999
|British Library Online Contents | 2001
|Epitaxial lateral overgrowth of semiconductor structures by liquid phase epitaxy
British Library Online Contents | 2005
|Epitaxial lateral overgrowth of semiconductor structures by liquid phase epitaxy
British Library Online Contents | 2005
|British Library Online Contents | 2000
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