Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
Lee, W. S. (Autor:in) / Chung, K. W. (Autor:in) / Shin, M. W. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1639-1642
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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