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Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
Okada, S. (Autor:in) / Nishiguchi, T. (Autor:in) / Shimizu, T. (Autor:in) / Sasaki, M. (Autor:in) / Oshima, S. (Autor:in) / Nishino, S. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 51-54
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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