High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

Vassilevski, K. V. / Nikitina, I. P. / Bhatnagar, P. et al. | British Library Online Contents | 2006

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Hinojosa, M. / Bayne, S. / Veliadis, V. et al. | British Library Online Contents | 2012

Temperature effect on electroluminescence spectra of silicon p-n junctions under avalanche breakdown condition

Lahbabi, M. / Jorio, M. / Ahaitouf, A. et al. | British Library Online Contents | 2001

Green Electroluminescence in Poly(3-cyclohexylthiophene) Light-Emitting Diodes

Berggren, M. / Gustafsson, G. / Inganaes, O. et al. | British Library Online Contents | 1994

Avalanche Multiplication and Breakdown in 4H-SiC Diodes

Ng, B. K. / David, J. P. R. / Massey, D. J. et al. | British Library Online Contents | 2004