Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

Jeong, Y. / Sakuraba, M. / Murota, J. | British Library Online Contents | 2005

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition

Tanno, H. / Sakuraba, M. / Tillack, B. et al. | British Library Online Contents | 2008

Atomic-layer etching of Ge using an ultraclean ECR plasma

Sugiyama, T. / Matsuura, T. / Murota, J. | British Library Online Contents | 1997

Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition

Goto, K. / Murota, J. / Ono, S. | British Library Online Contents | 1993

Electrical properties of W delta doped Si epitaxial films grown on Si(100) by ultraclean low-pressure chemical vapor deposition

Kurosawa, T. / Komatsu, T. / Sakuraba, M. et al. | British Library Online Contents | 2005