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Base contact material issues of intergrated high-speed Si/SiGe heterojunction bipolar transistors

Hohaus, J. / Schreiber, H.-U.

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Base contact material issues of intergrated high-speed Si/SiGe heterojunction bipolar transistors

Hohaus, J. / Schreiber, H.-U.

Base contact material issues of intergrated high-speed Si/SiGe heterojunction bipolar transistors

Hohaus, J. / Schreiber, H.-U.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Base contact material issues of intergrated high-speed Si/SiGe heterojunction bipolar transistors

Contributors:

Hohaus, J. (author) / Schreiber, H.-U. (author)

Published in:

MATERIALWISSENSCHAFT UND WERKSTOFFTECHNIK ; 31 ; 833-836

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0933-5137

Type of media:

Article (Journal)

Type of material:

Language:

German

Classification:

DDC: 620.11

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