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Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon
Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon
Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon
Peeva, A. (Autor:in) / Koegler, R. (Autor:in) / Brauer, G. (Autor:in) / Werner, P. (Autor:in) / Skorupa, W. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 297-301
01.01.2000
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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