Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon: Fid-Bau Portal

Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon

Peeva, A. / Koegler, R. / Brauer, G. / Werner, P. / Skorupa, W.

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Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon

Peeva, A. / Koegler, R. / Brauer, G. / Werner, P. / Skorupa, W.

Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon

Peeva, A. / Koegler, R. / Brauer, G. / Werner, P. / Skorupa, W.

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Check availability in my library

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Document information

Title:

Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon

Contributors:

Peeva, A. (author) / Koegler, R. (author) / Brauer, G. (author) / Werner, P. (author) / Skorupa, W. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 297-301

Publication date:

2000-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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