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Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
Kalinina, E.V. (Autor:in) / Zamoryanskaya, M.V. (Autor:in) / Kolesnikova, E.V. (Autor:in) / Lebedev, A.A. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 473-476
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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