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Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy
Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy
Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy
Zhou, H. (Autor:in) / Ruhm, A. (Autor:in) / Jin-Phillipp, N. Y. (Autor:in) / Phillipp, F. (Autor:in) / Gross, M. (Autor:in) / Schroder, H. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 16 ; 261-267
01.01.2001
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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