Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy: Fid-Bau Portal

Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

Zhou, H. / Ruhm, A. / Jin-Phillipp, N. Y. / Phillipp, F. / Gross, M. / Schroder, H.

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Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

Zhou, H. / Ruhm, A. / Jin-Phillipp, N. Y. / Phillipp, F. / Gross, M. / Schroder, H.

Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

Zhou, H. / Ruhm, A. / Jin-Phillipp, N. Y. / Phillipp, F. / Gross, M. / Schroder, H.

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Title:

Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

Contributors:

Zhou, H. (author) / Ruhm, A. (author) / Jin-Phillipp, N. Y. (author) / Phillipp, F. (author) / Gross, M. (author) / Schroder, H. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 16 ; 261-267

Publication date:

2001-01-01

Size:

7 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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