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Characterization of AlxInyGal-x-yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy
Characterization of AlxInyGal-x-yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy
Characterization of AlxInyGal-x-yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy
Abid, M.A. (Autor:in) / Hassan, H.A. (Autor:in) / Hassan, Z. (Autor:in) / Ng, S.S. (Autor:in) / Bakhori, S.K.M. (Autor:in) / Raof, N.H.A. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 14 ; 164-169
01.01.2011
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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