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Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching
Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching
Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching
Rabah, H. (Autor:in) / Alain, S. (Autor:in) / Claude, A. (Autor:in)
APPLIED SURFACE SCIENCE ; 171 ; 34-43
01.01.2001
10 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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