A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching
Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching
Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching
Rabah, H. (author) / Alain, S. (author) / Claude, A. (author)
APPLIED SURFACE SCIENCE ; 171 ; 34-43
2001-01-01
10 pages
Article (Journal)
English
DDC:
621.35
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