Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method
Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method
Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method
Kim, H. M. (Autor:in) / Oh, J. E. (Autor:in) / Kang, T. W. (Autor:in)
MATERIALS LETTERS ; 47 ; 276-280
01.01.2001
5 pages
Aufsatz (Zeitschrift)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
HVPE GaN and AlGaN "Substrates" for Homoepitaxy
British Library Online Contents | 1998
|Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing
British Library Online Contents | 2008
|The Growth of GaN Films on Si Substrates by HVPE
British Library Online Contents | 2005
|Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
British Library Online Contents | 2009
|CORROSION INDUCED SLAB LIFTOFF
Online Contents | 1994
|