Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy: Fid-Bau Portal

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Weyher, J. L. / Albrecht, M. / Wosinski, T. / Nowak, G. / Strunk, H. P. / Porowski, S.

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Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Weyher, J. L. / Albrecht, M. / Wosinski, T. / Nowak, G. / Strunk, H. P. / Porowski, S.

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Weyher, J. L. / Albrecht, M. / Wosinski, T. / Nowak, G. / Strunk, H. P. / Porowski, S.

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Titel:

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Beteiligte:

Weyher, J. L. (Autor:in) / Albrecht, M. (Autor:in) / Wosinski, T. (Autor:in) / Nowak, G. (Autor:in) / Strunk, H. P. (Autor:in) / Porowski, S. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80 ; 318 - 321

Erscheinungsdatum:

01.01.2001

Format / Umfang:

4 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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