A platform for research: civil engineering, architecture and urbanism
Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy
Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy
Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy
Weyher, J. L. (author) / Albrecht, M. (author) / Wosinski, T. (author) / Nowak, G. (author) / Strunk, H. P. (author) / Porowski, S. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80 ; 318 - 321
2001-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Transmission electron microscopy study of defect-selective etched (010) ScN crystals
British Library Online Contents | 2008
|Site-controlled fabrication of silicon nanotips by indentation-induced selective etching
British Library Online Contents | 2017
|British Library Online Contents | 2006
|British Library Online Contents | 1997
|High-resolution electron microscopy of dislocations of MgO
British Library Online Contents | 1994
|