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Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy
Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy
Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy
Amimer, K. (Autor:in) / Georgakilas, A. (Autor:in) / Androulidaki, M. (Autor:in) / Tsagaraki, K. (Autor:in) / Pavelescu, M. (Autor:in) / Mikroulis, S. (Autor:in) / Constantinidis, G. (Autor:in) / Arbiol, J. (Autor:in) / Peiro, F. (Autor:in) / Cornet, A. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80 ; 304 - 308
01.01.2001
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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