Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy: Fid-Bau Portal

Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

Muret, P. / Philippe, A. / Monroy, E. / Munoz, E. / Beaumont, B. / Omnes, F. / Gibart, P.

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Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

Muret, P. / Philippe, A. / Monroy, E. / Munoz, E. / Beaumont, B. / Omnes, F. / Gibart, P.

Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

Muret, P. / Philippe, A. / Monroy, E. / Munoz, E. / Beaumont, B. / Omnes, F. / Gibart, P.

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Titel:

Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

Beteiligte:

Muret, P. (Autor:in) / Philippe, A. (Autor:in) / Monroy, E. (Autor:in) / Munoz, E. (Autor:in) / Beaumont, B. (Autor:in) / Omnes, F. (Autor:in) / Gibart, P. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 91 - 94

Erscheinungsdatum:

01.01.2001

Format / Umfang:

4 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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