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Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy
Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy
Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy
Muret, P. (author) / Philippe, A. (author) / Monroy, E. (author) / Munoz, E. (author) / Beaumont, B. (author) / Omnes, F. (author) / Gibart, P. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 91 - 94
2001-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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