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Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency
Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency
Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency
Calleja, E. (Autor:in) / Sanchez-Garcia, M. A. (Autor:in) / Calle, F. (Autor:in) / Naranjo, F. B. (Autor:in) / Munoz, E. (Autor:in) / Jahn, U. (Autor:in) / Ploog, K. (Autor:in) / Sanchez, J. (Autor:in) / Calleja, J. M. (Autor:in) / Saarinen, K. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 2 - 8
01.01.2001
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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