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Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency
Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency
Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency
Calleja, E. (author) / Sanchez-Garcia, M. A. (author) / Calle, F. (author) / Naranjo, F. B. (author) / Munoz, E. (author) / Jahn, U. (author) / Ploog, K. (author) / Sanchez, J. (author) / Calleja, J. M. (author) / Saarinen, K. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 2 - 8
2001-01-01
7 pages
Article (Journal)
English
DDC:
620.11
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