Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

Habuka, H. / Tsuji, M. / Ando, Y. | British Library Online Contents | 2013

Heteroepitaxial growth of 3C-SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

Morikawa, Y. / Hirai, M. / Ohi, A. et al. | British Library Online Contents | 2007

Formation of High Quality SiC on Si(100) at 900^oC using Monomethylsilane Gas-Source MBE

Nakazawa, H. / Suemitsu, M. / Asami, S. | British Library Online Contents | 2000

Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE

Tomita, K. / Itoh, K. / Kachi, T. et al. | British Library Online Contents | 1998

Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane

Yasui, K. / Asada, K. / Akahane, T. | British Library Online Contents | 2000