Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

Habuka, H. / Tsuji, M. / Ando, Y. | British Library Online Contents | 2013

Heteroepitaxial growth of 3C-SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

Morikawa, Y. / Hirai, M. / Ohi, A. et al. | British Library Online Contents | 2007

Formation of High Quality SiC on Si(100) at 900^oC using Monomethylsilane Gas-Source MBE

Nakazawa, H. / Suemitsu, M. / Asami, S. | British Library Online Contents | 2000

Initial stage of 3C-SiC growth on Si(0 0 1)-2 x 1 surface using monomethylsilane

Narita, Y. / Inubushi, T. / Harashima, M. et al. | British Library Online Contents | 2003

Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE

Tomita, K. / Itoh, K. / Kachi, T. et al. | British Library Online Contents | 1998