Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system
In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system
In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system
LeThanh, V. (Autor:in) / Calmes, C. (Autor:in) / Zheng, Y. (Autor:in) / Bouchier, D. (Autor:in) / Fortuna, V. (Autor:in) / Dupuy, J. C. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 246 - 251
01.01.2002
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
In-situ growth monitoring during PLD of oxides using RHEED at high oxygen pressure
British Library Online Contents | 1998
|In-situ monitoring during pulsed laser deposition using RHEED at high pressure
British Library Online Contents | 1998
|Initial growth behaviors of SiGeC in SiGe and C alternate deposition
British Library Online Contents | 2005
|Real Time In Situ Texture Investigations of Thin Film Growth Using RHEED
British Library Online Contents | 2002
|In situ RHEED monitor of the growth of epitaxial anatase TiO2 thin films
British Library Online Contents | 2001
|