Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode: Fid-Bau Portal

Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Ohtake, H. / Nishiguchi, T. / Hirano, Y. / Sato, F. / Abe, M. / Saito, N. / Sawada, K. / Ando, T.

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Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Ohtake, H. / Nishiguchi, T. / Hirano, Y. / Sato, F. / Abe, M. / Saito, N. / Sawada, K. / Ando, T.

Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Ohtake, H. / Nishiguchi, T. / Hirano, Y. / Sato, F. / Abe, M. / Saito, N. / Sawada, K. / Ando, T.

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Titel:

Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Beteiligte:

Ohtake, H. (Autor:in) / Nishiguchi, T. (Autor:in) / Hirano, Y. (Autor:in) / Sato, F. (Autor:in) / Abe, M. (Autor:in) / Saito, N. (Autor:in) / Sawada, K. (Autor:in) / Ando, T. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 90 ; 120 - 124

Erscheinungsdatum:

01.01.2002

Format / Umfang:

5 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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