Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode: Fid-Bau Portal

Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Ohtake, H. / Nishiguchi, T. / Hirano, Y. / Sato, F. / Abe, M. / Saito, N. / Sawada, K. / Ando, T.

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Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Ohtake, H. / Nishiguchi, T. / Hirano, Y. / Sato, F. / Abe, M. / Saito, N. / Sawada, K. / Ando, T.

Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Ohtake, H. / Nishiguchi, T. / Hirano, Y. / Sato, F. / Abe, M. / Saito, N. / Sawada, K. / Ando, T.

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Title:

Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Contributors:

Ohtake, H. (author) / Nishiguchi, T. (author) / Hirano, Y. (author) / Sato, F. (author) / Abe, M. (author) / Saito, N. (author) / Sawada, K. (author) / Ando, T. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 90 ; 120 - 124

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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