Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces

Koumetz, S. / Marcon, J. / Gautier, S. et al. | British Library Online Contents | 1999

EELFS Determination of Interatomic Distances in Adsorbed Monolayers

Atrei, A. / Bardi, U. / Rovida, G. et al. | Springer Verlag | 1988

Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model

Marcon, J. / Koumetz, S. / Ketata, K. et al. | British Library Online Contents | 1997

Stability of phase-separated microstructure in LPE-grown InGaAs epitaxial layers

Lee, K. / Mahajan, S. / Johnson, W. C. | British Library Online Contents | 1994

Relaxation of thermal strain in GaN epitaxial layers grown on sapphire

Gfroerer, O. / Schluesener, T. / Haerle, V. et al. | British Library Online Contents | 1997