Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED
Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED
Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED
Benedetti, A. (Autor:in) / Cullis, A. G. (Autor:in) / Armigliato, A. (Autor:in) / Balboni, R. (Autor:in) / Frabboni, S. (Autor:in) / Mastracchio, G. F. (Autor:in) / Pavia, G. (Autor:in)
APPLIED SURFACE SCIENCE ; 188 ; 214-218
01.01.2002
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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